The effect of oxygen on the carbon nanotube field effect transistors

Noejung Park

CSE Lab, Samsung Advanced Institute of Technology, P.O. Box111, Suwon 440-600, Korea

We perform the first-principles electronic structure calculations to investigate the effects of oxygen on the carbon nanotube field effect transistors. In devices made up of aluminum or molybdenum electrodes, the oxidation-induced increase in the metal work function accounts for the n-type to p-type conversion. However such a conversion observed in the gold-nanotube contact is rather complicated and requires a detailed understanding of the electronic structure around the Fermi level. We also suggest that oxygen molecular adsorptions on the device could result in an ambipolar to unipolar conversion.