Instability and fluctuation of metallic atomic wires on silicon
Han Woong Yeom
Yonsei University
One-dimensional (1D) forms of conduction channels in nanometer scale is an essential ingredient of the nano and molecular electronics. Based on, particularly, silicon substrates, we have investigated the growth and physical properties of self-organized metallic atomic chains or nanowires. In fundamental points of view, some of these atomic chains (nanowires) on silicon surfaces were found to have very interesting electronic properties originating from their 1D or quasi-1D metallic band structures. The notable recent examples are 4x1-In on Si(111) [1, 2, 3], 5x2-Au on Si(111) [4], 1x2-Au on Si(5 5 7) [5], Si(5 5 12) [6] and Si(5 5 3) [7, 8], and GdSix on Si(001) [9]. A few important 1D physical properties have been discussed on these systems such as Peierls instability with charge density wave ground state [1-8] and non Fermi liquid behaviors [7, 10].
In the present talk, I will discuss (i) the band structures of these systems, (ii) the generic instability of their metallic phases, (iii) the intrinsic fluctuations on the 1D metallic systems, and (iv) the local and global effects of defects (dopants). These studies may unveil the microscopic details of the physics of 1D or quasi-1D metals as well as guide the possible application of nano-atomic-scale wires.
References
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